document number: 94093 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 1 fast soft recovery rectifier diode, 10 a 10etf..fppbf soft recovery series vishay high power products features/description the 10etf...fppbf fast so ft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. the fully isolated package (v ins = 2500 v rms ) is ul e78996 approved. this product series has been designed and qualified for industrial level and lead (pb)-free. applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications where se vere restrictions on conducted emi should be met protduct summary v f at 10 a < 1.33 v t rr 80 ns v rrm 1000 to 1200 v to-220ac full-pak b as e c a thode 2 1 3 anode c a thode available rohs* compliant major ratings and characteristics symbol characteristics values units i f(av) sinusoidal waveform 10 a v rrm 1000 to 1200 v i fsm 160 a v f 10 a, t j = 25 c 1.33 v t rr 1 a, 100 a/s 80 ns t j - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 10ETF10FPpbf 1000 1100 4 10etf12fppbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 95 c, 180 conduction half sine wave 10 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 160 10 ms sine pulse, no voltage reapplied 185 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 128 a 2 s 10 ms sine pulse, no voltage reapplied 180 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1800 a 2 s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94093 2 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 10 a, t j = 25 c 1.33 v forward slope resistance r t t j = 150 c 22.9 m threshold voltage v f(to) 0.96 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 4 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 10 apk 25 a/s 25 c 310 ns reverse recovery current i rr 4.7 a reverse recovery charge q rr 1.05 c typical snap factor s 0.6 i fm t rr dir dt i rm(rec) q rr t thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 2.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 0.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to- 220ac full-pak (jedec) 10etf12fp
document number: 94093 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 3 10etf..fppbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward powe r loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 140 150 70 0 2 4 6 8 10 12 maximum allowable case temperature (c) average forward current (a) 130 120 110 100 90 80 30 60 90 180 120 10etf.. series r thjc (dc) = 2.5 c/w conduction angle ? 0246810 18 maximum allowable case temperature (c) average forward current (a) 12 14 10etf.. series r thjc (dc) = 2.5 c/w ? conduction period 30 60 90 180 120 dc 140 150 70 130 120 110 100 90 80 16 0246810 maximum average forward power loss (w) average forward current (a) 16 0 12 10 8 6 4 2 14 30 60 90 180 120 rms limit 10etf.. series t j = 150 c conduction angle ? 02468 16 maximum average forward power loss (w) average forward current (a) 24 0 16 12 8 4 20 10 12 14 10etf.. series t j = 150 c dc 30 60 90 180 120 rms limit ? conduction period 180 80 40 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 140 60 100 120 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 10etf.. series 160 200 80 40 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 140 60 100 120 160 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied 10etf.. series 180
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94093 4 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery char ge characteristics, t j = 150 c fig. 12 - recovery curre nt characteristics, t j = 25 c 1000 10 1 0.5 1.0 1.5 2.0 2.5 4.5 instantaneous forward current (a) instantaneous forward voltage (v) 10etf.. series t j = 150 c t j = 25 c 100 4.0 3.0 3.5 0.6 0. 3 0 040 8 0 120 160 200 t rr - maximum rever s e recovery time ( s ) di/dt - rate of fall of forward current (a/ s ) 0.1 0.2 0.5 0.4 10etf.. s erie s t j = 25 c i fm = 10 a i fm = 1 a i fm = 2 a i fm = 5 a i fm = 8 a 0. 8 0.6 0 040 8 0 120 160 200 t rr - maximum rever s e recovery time ( s ) di/dt - rate of fall of forward current (a/ s ) 0.2 0.4 10etf.. s erie s t j = 150 c i fm = 8 a i fm = 1 a i fm = 10 a i fm = 5 a i fm = 2 a 1.6 0 040 8 0 120 160 200 q rr - maximum rever s e recovery charge (c) di/dt - rate of fall of forward current (a/ s ) 0.4 0. 8 1.2 i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a 10etf.. s erie s t j = 25 c 2.0 5 3 0 040 8 0 120 160 200 q rr - maximum rever s e recovery charge (c) di/dt - rate of fall of forward current (a/ s ) 1 2 4 10etf.. s erie s t j = 150 c i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a 20 12 0 040 8 0 120 160 200 i rr - maximum rever s e recovery current (a) di/dt - rate of fall of forward current (a/ s ) 4 8 16 10etf.. s erie s t j = 25 c i fm = 1 a i fm = 2 a i fm = 5 a i fm = 10 a i fm = 8 a
document number: 94093 for technical ques tions, contact: diodes-tech@vishay.com www.vishay.com revision: 28-may-08 5 10etf..fppbf soft recovery series fast soft recovery rectifier diode, 10 a vishay high power products fig. 13 - recovery curr ent characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 15 0 040 8 0 120 160 200 i rr - maximum rever s e recovery current (a) di/dt - rate of fall of forward current (a/ s ) 5 10 20 10etf.. s erie s t j = 150 c i fm = 10 a i fm = 5 a i fm = 2 a i fm = 1 a i fm = 8 a 0.1 1 10 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) z thjc - transient thermal impedance (c/w) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 steady state value (dc operation) 10etf.. series single pulse
www.vishay.com for technical questi ons, contact: diodes-tech@vishay.com document number: 94093 6 revision: 28-may-08 10etf..fppbf soft recovery series vishay high power products fast soft recovery rectifier diode, 10 a ordering information table - current rating (10 = 10 a) - circuit configuration: e = single diode - package: t = to-220ac - type of silicon: f = fast soft recovery rectifier - voltage code x 100 = v rrm - full-pak 1 2 3 4 5 6 7 - none = standard production pbf = lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 13 24 67 10 e t f 12 fp pbf links to related documents dimensions http://www.vishay.com/doc?95005 part marking information http://www.vishay.com/doc?95009
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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